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d s g g d s gate drain source applications ? ups and inverter applications ? half-bridge and full-bridge topologies ? resonant mode power supplies ? dc/dc and ac/dc converters ? or-ing and redundant power switches ? brushed and bldc motor drive applications ? battery powered circuits benefits ? improved gate, avalanche and dynamic dv/dt ruggedness ? fully characterized capacitance and avalanche soa ? enhanced body diode dv/d t and di/dt capability ? lead-free; rohs compliant; halogen-free base part number package type standard pack form quantity IRF100P218 to-247ac tube 25 IRF100P218 orderable part number v dss 100v r ds(on) typ. 1.07m ? max 1.28m ? i d (silicon limited) 462a ? i d (package limited) 195a ? to-247ac IRF100P218 g d s d final datasheet please read the important notice and warnings at the end of this document v1.0 www.infineon.com 2017-12-18 IRF100P218 ir mosfet - strongirfet? ? figure 1 typical on-resistance vs. gate voltage figure 2 maximum drain current vs. case temperature 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 1 2 3 4 5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 100a t j = 25c t j = 125c 25 50 75 100 125 150 175 t c , case temperature (c) 0 80 160 240 320 400 480 i d , drain current (a) limited by package
final datasheet 2 v1.0 2017-12-18 ir mosfet-strongirfet? IRF100P218 table of contents table of contents applications ?..???????????????????????????...?????..?????1 benefits ?..???????????????????????????...?????..?????.1 ordering table ?.??????????????????????????????????????1 table of contents ?.????????????????????????????????????...2 1 parameters ????????????????????????????????????3 2 maximum ratings, therma l, and avalanche characteristics ???????????????4 3 electrical characteristics ??????????????????????????????5 4 electrical characteristic diagrams ??????????????????????????6 package information ????????????????????????????????????14 qualification information ???????????????????????????????????15 revision history ??????????????????????????????????..????16
final datasheet 3 v1.0 2017-12-18 ir mosfet-strongirfet? IRF100P218 1 parameters table1 key performance parameters parameter values units v ds ? 100 v r ds (on) max ? 1.28 m ? i d (silicon limited) ? 462 ? a i d (package limited) ? 195 a parameters
final datasheet 4 v1.0 2017-12-18 ir mosfet-strongirfet? IRF100P218 table 2 maximum ratings (at t j =25 c, unless otherwise specified) parameter symbol values unit continuous drain current (silicon limited) i d 462? a continuous drain current (silicon limited) i d 327? pulsed drain current ? i dm 780? maximum power dissipation p d 556 w linear derating factor 3.7 w/c gate-to-source voltage v gs 20 v operating junction and storage temperature range t j t stg -55 to + 175 c soldering temperature, for 10 seconds (1.6mm from case) - 300 mounting torque, 6-32 or m3 screw - 10 lbfin (1.1 nm) - conditions t c = 25c, v gs @ 10v t c = 100c, v gs @ 10v t c = 25c t c = 25c t c = 25c - - - - continuous drain current (package limited) i d t c = 25c, v gs @ 10v 195 notes: ?? calculated continuous current based on maximum allowable junction temperature. bond wired current limit is 195a. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (refer to an-1140) ? ? repetitive ratings; pulse width limite d by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 0.21mh, r g = 50 ? , i as = 100a, v gs =10v. ?? i sd ? 100a, di/dt ? 1830a/s, v dd ?? v (br)dss , t j ? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss e ff . (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss e ff . (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? pulse drain current is limited by source bonding technology. table 4 avalanche characteristics parameter symbol values unit single pulse avalanche energy ? e as (thermally limited) 1050 mj avalanche current ? i ar see fig 16, 17, 23a, 23b a repetitive avalanche energy ? e ar mj table 3 thermal characteristics parameter symbol conditions typ. max. unit junction-to-case ? r ? jc t j approximately 90c - 0.27 c/w case-to-sink, flat greased surface r ? cs - 0.24 - junction-to-ambient r ? ja - - 40 min. - - - 2 maximum ratings and thermal characteristics maximum ratings and thermal characteristics
final datasheet 5 v1.0 2017-12-18 ir mosfet-strongirfet? IRF100P218 d s g table 6 dynamic characteristics parameter symbol conditions values unit min. typ. max. forward trans co nductance gfs v ds = 25v, i d = 100a 240 - - s total gate charge q g - 370 555 nc gate-to-source charge q gs - 100 - gate-to-drain charge q gd - 80 - total gate charge sync. (qg? qgd) q sync - 290 - turn-on delay time t d(on) v dd = 50v - 50 - ns rise time t r i d = 100a - 110 - turn-o ff delay time t d(o ff ) r g = 2.7 ? - 170 - fall time t f v gs = 10v ? - 120 - input capacitance c iss v gs = 0v - 25000 - pf output capacitance c oss v ds = 50v - 4000 - reverse transfer capacitance c rss ? = 250khz, see fig.7 - 110 - e ff ective output capacitance (energy related) c oss e ff .(er) v gs = 0v, v ds = 0v to 80v i - 4710 - output capacitance (time related) c oss e ff .(tr) v gs = 0v, v ds = 0v to 80v h - 5540 - i d = 100a v ds = 50v v gs = 10v table 7 reverse diode parameter symbol conditions values unit min. typ. max. continuous source current i s mosfet symbol - - 462c a (body diode) showing the pulsed source current integral reverse - - 780k (body diode) d p-n junction diode. diode forward voltage v sd t j = 25c, i s = 100a,v gs = 0v g - - 1.2 v peak diode recovery dv/dt f dv/dt t j = 175c, i s = 100a,v ds = 100v - 2.7 - v/ns reverse recovery time t rr t j = 25c - 110 - ns t j = 125c ? - 120 - reverse recovery charge q rr t j = 25c - 280 - nc t j = 125c ? - 360 - reverse recovery current i rrm t j = 25c - 4.7 - a i sm v dd = 85v i f = 100a, di/dt=100a/s f table 5 static characteristics parameter symbol conditions values unit min. typ. max. drain-to-source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 100 - - v breakdown voltage temp. coe ff icient ?v (br)dss /?t j reference to 25c, i d = 2ma d - 0.04 - v/c static drain-to-source on-resistance r ds(on) v gs = 10v, i d = 100a - 1.07 1.28 v gs = 6v, i d = 50a - 1.3 1.5 gate threshold voltage v gs(th) v ds = v gs , i d = 278a 2.2 - 3.8 v drain-to-source leakage current i dss v ds = 100v, v gs = 0v - - 5.0 a v ds = 100v, v gs = 0v, t j =125c - - 100 gate-to-source forward leakage i gss v gs = 20v - - 100 na ? gate resistance r g - 0.6 - ?? m ? 3 electrical characteristics electrical characteristics
final datasheet 6 v1.0 2017-12-18 ir mosfet-strongirfet? IRF100P218 electrical characteristic diagrams 4 electrical characteristic diagrams figure 3 typical output characteristics figure 4 typical output characteristics figure 5 typical transfer characteristics figure 6 normalized on-resistance vs. temperature ? ? 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , drain-to-source current (a) vgs top 12v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , drain-to-source current (a) vgs top 12v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 175c 4.5v 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 1 10 100 1000 i d , drain-to-source current (a) t j = 25c t j = 175c v ds = 25v ? 60s pulse width -60 -20 20 60 100 140 180 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 r ds(on) , drain-to-source on resistance (normalized) i d = 100a v gs = 10v
final datasheet 7 v1.0 2017-12-18 ir mosfet-strongirfet? IRF100P218 electrical characteristic diagrams figure 7 typical capacitance vs. drain-to-source voltage figure 8 typical gate charge vs. gate-to-source voltage ? figure 9 typical source-drain diode forward ? 0 80 160 240 320 400 480 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v gs , gate-to-source voltage (v) v ds = 80v v ds = 50v vds= 20v i d = 100a 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 1000000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 250khz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 v sd , source-to-drain voltage (v) 1 10 100 1000 i sd , reverse drain current (a) t j = 25c t j = 175c v gs = 0v
final datasheet 8 v1.0 2017-12-18 ir mosfet-strongirfet? IRF100P218 figure 10 maximum safe operating area ? ? figure 11 drain-to-source breakdown voltage figure 12 typical coss stored energy -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 99 101 103 105 107 109 111 113 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 2.0ma 0 20406080100 v ds, drain-to-source voltage (v) 0 2 4 6 8 10 12 14 16 18 20 22 energy (j) 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc limited by package
final datasheet 9 v1.0 2017-12-18 ir mosfet-strongirfet? IRF100P218 electrical characteristic diagrams figure 13 typical on-resistance vs. drain current ? figure 14 threshold voltage vs. temperature figure 15 maximum e ff ective transient thermal impedance, junction-to-case ? 0 25 50 75 100 125 150 175 200 i d , drain current (a) 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 5.0v vgs = 7.0v v gs = 8.0v v gs = 10v v gs = 12v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs(th) , gate threshold voltage (v) i d = 278a id = 1.0ma i d = 1.0a
final datasheet 10 2017-12-18 ir mosfet-strongirfet? IRF100P218 electrical characteristic diagrams figure 16 avalanche current vs. pulse width ? ? figure 17 maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 16, 17: (for further info, see an-1005 at www.infineon.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1 .3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. dt = allowable rise in juncti on temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 14) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 e ar , avalanche energy (mj) top single pulse bottom 1.0% duty cycle i d = 100a
final datasheet 11 2017-12-18 ir mosfet-strongirfet? IRF100P218 electrical characteristic diagrams figure 18 typical recovery current vs. dif/dt figure 19 typical recovery current vs. dif/dt ? figure 20 typical stored charge vs. dif/dt figure 21 typical stored charge vs. dif/dt ? 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 500 1000 1500 2000 2500 q rr (nc) i f = 60a v r = 85v t j = 25c t j = 125c 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 500 1000 1500 2000 2500 q rr (nc) i f = 100a v r = 85v t j = 25c t j = 125c 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 10 20 30 40 50 i rrm (a) i f = 100a v r = 85v t j = 25c t j = 125c 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 10 20 30 40 50 i rrm (a) i f = 60a v r = 85v t j = 25c t j = 125c
final datasheet 12 2017-12-18 ir mosfet-strongirfet? IRF100P218 electrical characteristic diagrams figure 22 peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets ? figure 23a unclamped inductive test circuit figure 23b unclamped inductive waveforms ?
final datasheet 13 2017-12-18 ir mosfet-strongirfet? IRF100P218 electrical characteristic diagrams figure 24a switching time test circuit ? figure 24b switching time waveforms figure 25a gate charge test circuit figure 25b gate charge waveform ?
final datasheet 14 2017-12-18 ir mosfet-strongirfet? IRF100P218 to-247ac package outline (dimensions are shown in millimeters (inches)) to-247ac package is not recommended for surface mount application. to-247ac part marking information year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657 package information 5 package information
final datasheet 15 2017-12-18 ir mosfet-strongirfet? IRF100P218 ? applicable version of jedec standar d at the time of product release. qualification information? qualification level ? industrial (per jedec jesd47f) ? moisture sensitivity level to-247ac n/a rohs compliant yes qualification information 6 qualification information
final datasheet 16 2017-12-18 ir mosfet-strongirfet? IRF100P218 revision history revision history major changes since the last revision page or reference revision date description of changes all pages 1.0 2017-12-18 ?? first release data sheet.
final datasheet 17 2017-12-18 ir mosfet-strongirfet? IRF100P218 trademarks of infineon technologies ag hvic?, ipm?, pfc?, au-convertir?, aurix?, c166?, canpak?, ci pos?, cipurse?, cooldp?, coolgan?, coolir?, coolmos?, coolset?, coolsic?, dave?, di-pol?, directfet?, drblade?, easyp im?, econobridge?, econodual?, econopack?, econopim?, eicedriver?, eupec?, fcos?, ga npowir?, hexfet?, hitfet?, hybridpack?, imotion?, ir am?, isoface?, isopack?, ledrivir?, litix?, mipaq?, modstack?, my-d?, novalithic?, o ptiga?, optimos?, origa?, powiraudio?, powirstage?, primepack?, primestack?, pr ofet?, pro-sil?, rasic?, real3?, smartlewis?, solid flas h?, spoc?, strongirfet?, supirbuck?, tempfet?, trenchstop?, tricore?, uhvic?, xhp?, xmc? trademarks updated november 2015 other trademarks all referenced product or service names and trademar ks are the property of their respective owners. important notice the information given in th is document shall in no event be regarded as a guarantee of conditions or characteristics (?bescha ff enheitsgarantie?) . with respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer?s products and any use of the product of infineon technologies in customer?s applications. the data contained in th is document is exclusively intended for technically trained sta ff . it is the responsibility of customer?s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies o ff ice (www.infineon.com). warnings due to technical requirements products may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies o ff ice. except as otherwise explicitly approved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technologies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. edition 2015-05-06 published by infineon technologies ag 81726 munich, germany ?? ? 2016 infineon technologies ag. all rights reserved. ?? do you have a question about this document? email: erratum@infineon.com document reference

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